IPG20N06S4L14ATMA2
For Reference Only
| Part Number | IPG20N06S4L14ATMA2 |
| PNEDA Part # | IPG20N06S4L14ATMA2 |
| Description | MOSFET 2N-CH 8TDSON |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,208 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPG20N06S4L14ATMA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPG20N06S4L14ATMA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
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- Delivery date: usually 2 to 7 working days.
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IPG20N06S4L14ATMA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 13.7mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2890pF @ 25V |
| Power - Max | 50W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
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Manufacturer Diodes Incorporated Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 5.1A Rds On (Max) @ Id, Vgs 45mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1154pF @ 20V Power - Max 1.3W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs 25mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 30V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.4A (Ta) Rds On (Max) @ Id, Vgs 15mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1415pF @ 15V Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
