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IPI16CN10N G

IPI16CN10N G

For Reference Only

Part Number IPI16CN10N G
PNEDA Part # IPI16CN10N-G
Description MOSFET N-CH 100V 53A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,860
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI16CN10N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI16CN10N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI16CN10N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16.2mOhm @ 53A, 10V
Vgs(th) (Max) @ Id4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3220pF @ 50V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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