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IPI80N06S4L05AKSA2

IPI80N06S4L05AKSA2

For Reference Only

Part Number IPI80N06S4L05AKSA2
PNEDA Part # IPI80N06S4L05AKSA2
Description MOSFET N-CH TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,484
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI80N06S4L05AKSA2 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI80N06S4L05AKSA2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IPI80N06S4L05AKSA2 Specifications

ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 40A, 4.5V
Vgs(th) (Max) @ Id2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds8180pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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