Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPP80N08S2L07AKSA1

IPP80N08S2L07AKSA1

For Reference Only

Part Number IPP80N08S2L07AKSA1
PNEDA Part # IPP80N08S2L07AKSA1
Description MOSFET N-CH 75V 80A TO220-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP80N08S2L07AKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP80N08S2L07AKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPP80N08S2L07AKSA1 Datasheet
  • where to find IPP80N08S2L07AKSA1
  • Infineon Technologies

  • Infineon Technologies IPP80N08S2L07AKSA1
  • IPP80N08S2L07AKSA1 PDF Datasheet
  • IPP80N08S2L07AKSA1 Stock

  • IPP80N08S2L07AKSA1 Pinout
  • Datasheet IPP80N08S2L07AKSA1
  • IPP80N08S2L07AKSA1 Supplier

  • Infineon Technologies Distributor
  • IPP80N08S2L07AKSA1 Price
  • IPP80N08S2L07AKSA1 Distributor

IPP80N08S2L07AKSA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs233nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

The Products You May Be Interested In

IPD075N03LGBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 15V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-11

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFSL4020PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

105mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 50V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IXFN60N80P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

53A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

18000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

DMN2300UFB4-7B

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

175mOhm @ 300mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.6nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

64.3pF @ 25V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN

APTM20UM04SAG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

417A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 208.5A, 10V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

560nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

28800pF @ 25V

FET Feature

-

Power Dissipation (Max)

1560W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP6

Package / Case

SP6

Recently Sold

FMMT625TA

FMMT625TA

Diodes Incorporated

TRANS NPN 150V 1A SOT23-3

MAX690AESA+T

MAX690AESA+T

Maxim Integrated

IC SUPERVISOR MPU 8-SOIC

MAX912ESE+

MAX912ESE+

Maxim Integrated

IC COMPARATOR LP 16-SOIC

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

EX-11EB

EX-11EB

Panasonic Industrial Automation Sales

SENSOR THROUGH-BEAM 15CM NPN

S29AL016J70TFI020

S29AL016J70TFI020

Cypress Semiconductor

IC FLASH 16M PARALLEL 48TSOP

ZXM61P02FTA

ZXM61P02FTA

Diodes Incorporated

MOSFET P-CH 20V 0.9A SOT23-3

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

250R05L0R4AV4T

250R05L0R4AV4T

Johanson Technology

CAP CER 0.4PF 25V C0G/NP0 0201

LTC1625CS#PBF

LTC1625CS#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK/BOOST 16SOIC

MC14099BDWR2G

MC14099BDWR2G

ON Semiconductor

IC LATCH 8BIT ADDRESS 16-SOIC

GQM1555C2D3R3CB01D

GQM1555C2D3R3CB01D

Murata

CAP CER 3.3PF 200V NP0 0402