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IRF630NS

IRF630NS

For Reference Only

Part Number IRF630NS
PNEDA Part # IRF630NS
Description MOSFET N-CH 200V 9.3A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 4,446
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF630NS Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF630NS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF630NS, IRF630NS Datasheet (Total Pages: 12, Size: 243.91 KB)
PDFIRF630NSTRR Datasheet Cover
IRF630NSTRR Datasheet Page 2 IRF630NSTRR Datasheet Page 3 IRF630NSTRR Datasheet Page 4 IRF630NSTRR Datasheet Page 5 IRF630NSTRR Datasheet Page 6 IRF630NSTRR Datasheet Page 7 IRF630NSTRR Datasheet Page 8 IRF630NSTRR Datasheet Page 9 IRF630NSTRR Datasheet Page 10 IRF630NSTRR Datasheet Page 11

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IRF630NS Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds575pF @ 25V
FET Feature-
Power Dissipation (Max)82W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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