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IRF7752GTRPBF

IRF7752GTRPBF

For Reference Only

Part Number IRF7752GTRPBF
PNEDA Part # IRF7752GTRPBF
Description MOSFET 2N-CH 30V 4.6A 8TSSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF7752GTRPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF7752GTRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
IRF7752GTRPBF, IRF7752GTRPBF Datasheet (Total Pages: 8, Size: 228.8 KB)
PDFIRF7752GTRPBF Datasheet Cover
IRF7752GTRPBF Datasheet Page 2 IRF7752GTRPBF Datasheet Page 3 IRF7752GTRPBF Datasheet Page 4 IRF7752GTRPBF Datasheet Page 5 IRF7752GTRPBF Datasheet Page 6 IRF7752GTRPBF Datasheet Page 7 IRF7752GTRPBF Datasheet Page 8

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IRF7752GTRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.6A
Rds On (Max) @ Id, Vgs30mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds861pF @ 25V
Power - Max1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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Gate Charge (Qg) (Max) @ Vgs

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Input Capacitance (Ciss) (Max) @ Vds

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Power - Max

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

7.9A

Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Power - Max

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