Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFB7430GPBF

IRFB7430GPBF

For Reference Only

Part Number IRFB7430GPBF
PNEDA Part # IRFB7430GPBF
Description MOSFET N CH 40V 195A TO220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB7430GPBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB7430GPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFB7430GPBF Datasheet
  • where to find IRFB7430GPBF
  • Infineon Technologies

  • Infineon Technologies IRFB7430GPBF
  • IRFB7430GPBF PDF Datasheet
  • IRFB7430GPBF Stock

  • IRFB7430GPBF Pinout
  • Datasheet IRFB7430GPBF
  • IRFB7430GPBF Supplier

  • Infineon Technologies Distributor
  • IRFB7430GPBF Price
  • IRFB7430GPBF Distributor

IRFB7430GPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs460nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14240pF @ 25V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

DMG1013TQ-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

460mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

700mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.58nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

59.76pF @ 16V

FET Feature

-

Power Dissipation (Max)

270mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

STP20NF20

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

125mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

940pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

ZXM64P03XTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

75mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

825pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-MSOP

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

FDD6682

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.2mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 15V

FET Feature

-

Power Dissipation (Max)

71W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-PAK (TO-252)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

CSD25480F3T

Texas Instruments

Manufacturer

Series

FemtoFET™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Rds On (Max) @ Id, Vgs

132mOhm @ 400mA, 8V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.91nC @ 10V

Vgs (Max)

-12V

Input Capacitance (Ciss) (Max) @ Vds

155pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

3-PICOSTAR

Package / Case

3-XFDFN

Recently Sold

LM2596DSADJR4G

LM2596DSADJR4G

ON Semiconductor

IC REG MULT CONFG ADJ 3A D2PAK-5

PIC12F508-I/SN

PIC12F508-I/SN

Microchip Technology

IC MCU 8BIT 768B FLASH 8SOIC

BAT54WS-7-F

BAT54WS-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 100MA SOD323

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

IRFU9024NPBF

IRFU9024NPBF

Infineon Technologies

MOSFET P-CH 55V 11A I-PAK

ADP1708ACPZ-R7

ADP1708ACPZ-R7

Analog Devices

IC REG LINEAR POS ADJ 1A 8LFCSP

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

MAX3232CSE+T

MAX3232CSE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SO

564R60GAT22

564R60GAT22

Vishay Cera-Mite

CAP CER 220PF 6KV X5F RADIAL

24LC02B-I/ST

24LC02B-I/ST

Microchip Technology

IC EEPROM 2K I2C 400KHZ 8TSSOP

AD7495ARMZ

AD7495ARMZ

Analog Devices

IC ADC 12BIT SAR 8MSOP

74HC4066D

74HC4066D

Toshiba Semiconductor and Storage

IC SWITCH QUAD 14SOIC