Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFB7434PBF

IRFB7434PBF

For Reference Only

Part Number IRFB7434PBF
PNEDA Part # IRFB7434PBF
Description MOSFET N CH 40V 195A TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 17,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFB7434PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFB7434PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFB7434PBF Datasheet
  • where to find IRFB7434PBF
  • Infineon Technologies

  • Infineon Technologies IRFB7434PBF
  • IRFB7434PBF PDF Datasheet
  • IRFB7434PBF Stock

  • IRFB7434PBF Pinout
  • Datasheet IRFB7434PBF
  • IRFB7434PBF Supplier

  • Infineon Technologies Distributor
  • IRFB7434PBF Price
  • IRFB7434PBF Distributor

IRFB7434PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®, StrongIRFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs324nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10820pF @ 25V
FET Feature-
Power Dissipation (Max)294W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

14mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 25V

FET Feature

-

Power Dissipation (Max)

85W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

APT77N60SC6

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 44.4A, 10V

Vgs(th) (Max) @ Id

3.6V @ 2.96mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

481W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STH270N4F3-6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7400pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

H²PAK

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

52mOhm @ 40A, 20V

Vgs(th) (Max) @ Id

2.8V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 20V

Vgs (Max)

+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds

1895pF @ 1000V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

2.2Ohm @ 3A, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

95nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2650pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

T520V337M2R5ATE009

T520V337M2R5ATE009

KEMET

CAP TANT POLY 330UF 2.5V 2917

TAJB107M006RNJ

TAJB107M006RNJ

CAP TANT 100UF 20% 6.3V 1411

ADM3202ARUZ-REEL

ADM3202ARUZ-REEL

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

CTX01-15473

CTX01-15473

Eaton - Electronics Division

FIXED INDUCTOR

MM3Z5V1ST1G

MM3Z5V1ST1G

ON Semiconductor

DIODE ZENER 5.1V 300MW SOD323

FDC6325L

FDC6325L

ON Semiconductor

IC LOAD SWITCH INT 8VIN SSOT-6

NTF2955T1G

NTF2955T1G

ON Semiconductor

MOSFET P-CH 60V 1.7A SOT-223

MAX202EEUE

MAX202EEUE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

MCP6566UT-E/OT

MCP6566UT-E/OT

Microchip Technology

IC COMPARATOR O-D 1.8V SOT23-5

HCPL-0631-500E

HCPL-0631-500E

Broadcom

OPTOISO 3.75KV 2CH OPEN COLL 8SO

FT245RL-REEL

FT245RL-REEL

FTDI, Future Technology Devices International Ltd

IC USB TO PARALLEL FIFO 28-SSOP

T495D337K006ATE040

T495D337K006ATE040

KEMET

CAP TANT 330UF 10% 6.3V 2917