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IRFBG30PBF

IRFBG30PBF

For Reference Only

Part Number IRFBG30PBF
PNEDA Part # IRFBG30PBF
Description MOSFET N-CH 1000V 3.1A TO-220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,032
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFBG30PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFBG30PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFBG30PBF, IRFBG30PBF Datasheet (Total Pages: 9, Size: 1,640.42 KB)
PDFIRFBG30 Datasheet Cover
IRFBG30 Datasheet Page 2 IRFBG30 Datasheet Page 3 IRFBG30 Datasheet Page 4 IRFBG30 Datasheet Page 5 IRFBG30 Datasheet Page 6 IRFBG30 Datasheet Page 7 IRFBG30 Datasheet Page 8 IRFBG30 Datasheet Page 9

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IRFBG30PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds980pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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