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IRFD210PBF

IRFD210PBF

For Reference Only

Part Number IRFD210PBF
PNEDA Part # IRFD210PBF
Description MOSFET N-CH 200V 600MA 4-DIP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 32,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFD210PBF Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberIRFD210PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFD210PBF, IRFD210PBF Datasheet (Total Pages: 9, Size: 1,707.67 KB)
PDFIRFD210 Datasheet Cover
IRFD210 Datasheet Page 2 IRFD210 Datasheet Page 3 IRFD210 Datasheet Page 4 IRFD210 Datasheet Page 5 IRFD210 Datasheet Page 6 IRFD210 Datasheet Page 7 IRFD210 Datasheet Page 8 IRFD210 Datasheet Page 9

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IRFD210PBF Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device Package4-DIP, Hexdip, HVMDIP
Package / Case4-DIP (0.300", 7.62mm)

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