+86-755-83210135
sales@pneda.com
sales@pneda.com
2192172632
Send Message
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFR3708TRRPBF

IRFR3708TRRPBF

For Reference Only

Part Number IRFR3708TRRPBF
PNEDA Part # IRFR3708TRRPBF
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 61A DPAK
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 288
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jan 18 - Jan 23 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

IRFR3708TRRPBF Resources

Brand Infineon Technologies
Mfr. Part NumberIRFR3708TRRPBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

IRFR3708TRRPBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Rds On (Max) @ Id, Vgs12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2417pF @ 15V
FET Feature-
Power Dissipation (Max)87W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

The Products You May Be Interested In

SI1032R-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

140mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

5Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.75nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75A

Package / Case

SC-75A

NTD4804NA-35G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

14.5A (Ta), 124A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4490pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.43W (Ta), 93.75W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak

SPN03N60S5

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

700mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5.5V @ 135µA

Gate Charge (Qg) (Max) @ Vgs

12.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

440pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

137mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

339pF @ 25V

FET Feature

-

Power Dissipation (Max)

53W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STS30N3LLH6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4040pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Certificates

Quick Inquiry

Add to Shopping Cart

Contact Us

Need Help?

Don't hesitate to contact us if you have any question about IRFR3708TRRPBF.

Recently Sold

S1M-13-F

S1M-13-F

Diodes Incorporated

DIODE GEN PURP 1KV 1A SMA

JAN1N5811

JAN1N5811

Microsemi

DIODE GEN PURP 150V 6A AXIAL

MT29F2G16ABBEAHC-AIT:E TR

MT29F2G16ABBEAHC-AIT:E TR

Micron Technology Inc.

IC FLASH 2G PARALLEL 63VFBGA

PHV-5R4V155-R

PHV-5R4V155-R

Eaton - Electronics Division

CAP 1.5F -10% +30% 5.4V T/H

SMBJ40A

SMBJ40A

Bourns

TVS DIODE 40V 64.5V SMB

SMF36AT1G

SMF36AT1G

Littelfuse

TVS DIODE 36V 58.1V SOD123FL

MBR0530T1G

MBR0530T1G

ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

BR24T128-W

BR24T128-W

Rohm Semiconductor

IC EEPROM 128K I2C 8-DIP-T

TR2/TCP1.25-R

TR2/TCP1.25-R

Eaton - Electronics Division

FUSE BRD MNT 1.25A 250VAC 2SMD

CKP25202R2M-T

CKP25202R2M-T

Taiyo Yuden

FIXED IND 2.2UH 400MA 90 MOHM

MAX13442EASA+T

MAX13442EASA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SO

SESD0402X1BN-0010-098

SESD0402X1BN-0010-098

Littelfuse

TVS DIODE 7V 10V 0402