IRFR3708TRRPBF
For Reference Only
| Part Number | IRFR3708TRRPBF |
| PNEDA Part # | IRFR3708TRRPBF |
| Manufacturer | Infineon Technologies |
| Description | MOSFET N-CH 30V 61A DPAK |
| Unit Price |
|
| In Stock | 5,184 |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Payment |  |
| Shipping |  |
| Estimated Delivery | Oct 20 - Oct 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [PNEDA-Warranty]* |
IRFR3708TRRPBF Resources
| Brand | Infineon Technologies |
| Mfr. Part Number | IRFR3708TRRPBF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
IRFR3708TRRPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 700mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5.5V @ 135µA Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 11.4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 31A (Ta), 164A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 135µA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 113W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-LFPAK Package / Case SOT-1205, 8-LFPAK56 |
Manufacturer ON Semiconductor Series - FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-EFCP (1.9x1.46) Package / Case 6-XFBGA |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 14.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 8mOhm @ 14.9A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 5962pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package P-DSO-8 Package / Case 8-SOIC (0.154", 3.90mm Width) |
Quick Inquiry
Add to Shopping Cart
Contact Us
Don't hesitate to contact us if you have any question about IRFR3708TRRPBF.
- CALL US
+86-0755-83210135 ext. 203
- EMAIL
- SKYPE
- WeChat
- Message
