Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IRFSL17N20D

IRFSL17N20D

For Reference Only

Part Number IRFSL17N20D
PNEDA Part # IRFSL17N20D
Description MOSFET N-CH 200V 16A TO-262
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 30 - Jul 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFSL17N20D Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFSL17N20D
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRFSL17N20D, IRFSL17N20D Datasheet (Total Pages: 12, Size: 144.77 KB)
PDFIRFS17N20DTRR Datasheet Cover
IRFS17N20DTRR Datasheet Page 2 IRFS17N20DTRR Datasheet Page 3 IRFS17N20DTRR Datasheet Page 4 IRFS17N20DTRR Datasheet Page 5 IRFS17N20DTRR Datasheet Page 6 IRFS17N20DTRR Datasheet Page 7 IRFS17N20DTRR Datasheet Page 8 IRFS17N20DTRR Datasheet Page 9 IRFS17N20DTRR Datasheet Page 10 IRFS17N20DTRR Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IRFSL17N20D Datasheet
  • where to find IRFSL17N20D
  • Infineon Technologies

  • Infineon Technologies IRFSL17N20D
  • IRFSL17N20D PDF Datasheet
  • IRFSL17N20D Stock

  • IRFSL17N20D Pinout
  • Datasheet IRFSL17N20D
  • IRFSL17N20D Supplier

  • Infineon Technologies Distributor
  • IRFSL17N20D Price
  • IRFSL17N20D Distributor

IRFSL17N20D Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 140W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

The Products You May Be Interested In

IRFR5410TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

760pF @ 25V

FET Feature

-

Power Dissipation (Max)

66W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTB5405NG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

116A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

88nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4000pF @ 32V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUF75617D3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

90mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 25V

FET Feature

-

Power Dissipation (Max)

64W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FCH023N65S3L4

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET® III

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 7.5mA

Gate Charge (Qg) (Max) @ Vgs

222nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7160pF @ 400V

FET Feature

-

Power Dissipation (Max)

595W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-4

GP1M009A020HG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

414pF @ 25V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

AD826AR

AD826AR

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

PIC12F1822-I/SN

PIC12F1822-I/SN

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 8SOIC

LAN8710AI-EZK-TR

LAN8710AI-EZK-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 32QFN

MAX31730AUB+T

MAX31730AUB+T

Maxim Integrated

IC REMOTE TEMP SENSOR USSOP

LT1129IQ#PBF

LT1129IQ#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 700MA 5DDPAK

S34ML02G104TFI010

S34ML02G104TFI010

SkyHigh Memory Limited

IC FLASH 2G PARALLEL 48TSOP I

SMBJ26A-13-F

SMBJ26A-13-F

Diodes Incorporated

TVS DIODE 26V 42.1V SMB

SMBJ30CA-E3/52

SMBJ30CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 30V 48.4V DO214AA

ADA4861-3YRZ-RL7

ADA4861-3YRZ-RL7

Analog Devices

IC OPAMP CFA 3 CIRCUIT 14SOIC

5CEBA9F27C7N

5CEBA9F27C7N

Intel

IC FPGA 336 I/O 672FBGA

SZNUP2105LT1G

SZNUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM