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IXFH52N30P

IXFH52N30P

For Reference Only

Part Number IXFH52N30P
PNEDA Part # IXFH52N30P
Description MOSFET N-CH 300V 52A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,780
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH52N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH52N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH52N30P, IXFH52N30P Datasheet (Total Pages: 5, Size: 182.09 KB)
PDFIXFV52N30PS Datasheet Cover
IXFV52N30PS Datasheet Page 2 IXFV52N30PS Datasheet Page 3 IXFV52N30PS Datasheet Page 4 IXFV52N30PS Datasheet Page 5

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IXFH52N30P Specifications

ManufacturerIXYS
SeriesPolarHT™ HiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs66mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3490pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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