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IXSK35N120AU1

IXSK35N120AU1

For Reference Only

Part Number IXSK35N120AU1
PNEDA Part # IXSK35N120AU1
Description IGBT 1200V 70A 300W TO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXSK35N120AU1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXSK35N120AU1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSK35N120AU1, IXSK35N120AU1 Datasheet (Total Pages: 2, Size: 40.6 KB)
PDFIXSK35N120AU1 Datasheet Cover
IXSK35N120AU1 Datasheet Page 2

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IXSK35N120AU1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 35A
Power - Max300W
Switching Energy10mJ (off)
Input TypeStandard
Gate Charge150nC
Td (on/off) @ 25°C80ns/400ns
Test Condition960V, 35A, 2.7Ohm, 15V
Reverse Recovery Time (trr)60ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264AA(IXSK)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

400A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 55A

Power - Max

460W

Switching Energy

5.1mJ (on), 13.3mJ (off)

Input Type

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Gate Charge

185nC

Td (on/off) @ 25°C

23ns/365ns

Test Condition

960V, 55A, 3Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Power - Max

156W

Switching Energy

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Input Type

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Gate Charge

275nC

Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

1.5µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

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SGL40N150DTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

4.7V @ 15V, 40A

Power - Max

200W

Switching Energy

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Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264-3

IRG4IBC30FDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20.3A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

45W

Switching Energy

630µJ (on), 1.39mJ (off)

Input Type

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Gate Charge

51nC

Td (on/off) @ 25°C

42ns/230ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 10A

Power - Max

100W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

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