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IXSX50N60AU1

IXSX50N60AU1

For Reference Only

Part Number IXSX50N60AU1
PNEDA Part # IXSX50N60AU1
Description IGBT 600V 75A 300W PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXSX50N60AU1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXSX50N60AU1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXSX50N60AU1, IXSX50N60AU1 Datasheet (Total Pages: 5, Size: 138.66 KB)
PDFIXSX50N60AU1 Datasheet Cover
IXSX50N60AU1 Datasheet Page 2 IXSX50N60AU1 Datasheet Page 3 IXSX50N60AU1 Datasheet Page 4 IXSX50N60AU1 Datasheet Page 5

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IXSX50N60AU1 Specifications

ManufacturerIXYS
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 50A
Power - Max300W
Switching Energy6mJ (off)
Input TypeStandard
Gate Charge190nC
Td (on/off) @ 25°C70ns/200ns
Test Condition480V, 50A, 2.7Ohm, 15V
Reverse Recovery Time (trr)50ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

530µJ (on), 380µJ (off)

Input Type

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Gate Charge

45nC

Td (on/off) @ 25°C

14ns/110ns

Test Condition

600V, 9A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

315nC

Td (on/off) @ 25°C

35ns/190ns

Test Condition

600V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr)

170ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

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TO-247-3

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Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

190A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

625W

Switching Energy

465µJ (on), 635µJ (off)

Input Type

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Gate Charge

165nC

Td (on/off) @ 25°C

19ns/85ns

Test Condition

400V, 50A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

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STGWA8M120DF3

STMicroelectronics

Manufacturer

STMicroelectronics

Series

M

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 8A

Power - Max

167W

Switching Energy

390µJ (on), 370µJ (Off)

Input Type

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Gate Charge

32nC

Td (on/off) @ 25°C

20ns/126ns

Test Condition

600V, 8A, 33Ohm, 15V

Reverse Recovery Time (trr)

103ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

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