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IXTA1N170DHV

IXTA1N170DHV

For Reference Only

Part Number IXTA1N170DHV
PNEDA Part # IXTA1N170DHV
Description MOSFET N-CH 1700V 1A TO-263
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTA1N170DHV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTA1N170DHV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTA1N170DHV, IXTA1N170DHV Datasheet (Total Pages: 5, Size: 233.51 KB)
PDFIXTA1N170DHV Datasheet Cover
IXTA1N170DHV Datasheet Page 2 IXTA1N170DHV Datasheet Page 3 IXTA1N170DHV Datasheet Page 4 IXTA1N170DHV Datasheet Page 5

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IXTA1N170DHV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs47nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3090pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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