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IXTP10N60P

IXTP10N60P

For Reference Only

Part Number IXTP10N60P
PNEDA Part # IXTP10N60P
Description MOSFET N-CH 600V 10A TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTP10N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTP10N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTP10N60P, IXTP10N60P Datasheet (Total Pages: 4, Size: 152.92 KB)
PDFIXTA10N60P Datasheet Cover
IXTA10N60P Datasheet Page 2 IXTA10N60P Datasheet Page 3 IXTA10N60P Datasheet Page 4

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IXTP10N60P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 25V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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