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IXTY4N60P

IXTY4N60P

For Reference Only

Part Number IXTY4N60P
PNEDA Part # IXTY4N60P
Description MOSFET N-CH TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,214
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY4N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY4N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTY4N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds635pF @ 25V
FET Feature-
Power Dissipation (Max)89W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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