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IXXH40N65B4D1

IXXH40N65B4D1

For Reference Only

Part Number IXXH40N65B4D1
PNEDA Part # IXXH40N65B4D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,868
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXH40N65B4D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXH40N65B4D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXH40N65B4D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX4™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)115A
Current - Collector Pulsed (Icm)225A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max455W
Switching Energy1.4mJ (on), 800µJ (off)
Input TypeStandard
Gate Charge66nC
Td (on/off) @ 25°C20ns/115ns
Test Condition400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)60ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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131µJ (on), 96µJ (off)

Input Type

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Gate Charge

94nC

Td (on/off) @ 25°C

17.6ns/94.4ns

Test Condition

400V, 12.5A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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21nC

Td (on/off) @ 25°C

900ns/4.8µs

Test Condition

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Reverse Recovery Time (trr)

1.9µs

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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