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IXYH100N65A3

IXYH100N65A3

For Reference Only

Part Number IXYH100N65A3
PNEDA Part # IXYH100N65A3
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 15 - Jun 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH100N65A3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH100N65A3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYH100N65A3 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)240A
Current - Collector Pulsed (Icm)480A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 70A
Power - Max470W
Switching Energy3.15mJ (on), 2.2mJ (off)
Input TypeStandard
Gate Charge178nC
Td (on/off) @ 25°C24ns/174ns
Test Condition400V, 50A, 2Ohm, 15V
Reverse Recovery Time (trr)64ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

250W

Switching Energy

490µJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

18ns/95ns

Test Condition

400V, 50A, 2Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

HB

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2V @ 7V, 40A

Power - Max

283W

Switching Energy

-

Input Type

Standard

Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 Long Leads

IRG4BC30F-STRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

31A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Power - Max

100W

Switching Energy

230µJ (on), 1.18mJ (off)

Input Type

Standard

Gate Charge

51nC

Td (on/off) @ 25°C

21ns/200ns

Test Condition

480V, 17A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

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Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

190A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

625W

Switching Energy

465µJ (on), 635µJ (off)

Input Type

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Gate Charge

165nC

Td (on/off) @ 25°C

19ns/85ns

Test Condition

400V, 50A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

Supplier Device Package

-

RJP4010AGE-00#P5

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

400V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

9V @ 3V, 150A

Power - Max

1.6W

Switching Energy

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Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-TSSOJ (0.094", 2.40mm Width)

Supplier Device Package

8-TSOJ

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