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IXYP10N65C3

IXYP10N65C3

For Reference Only

Part Number IXYP10N65C3
PNEDA Part # IXYP10N65C3
Description IGBT 650V 30A 160W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,688
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP10N65C3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP10N65C3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYP10N65C3, IXYP10N65C3 Datasheet (Total Pages: 6, Size: 206.31 KB)
PDFIXYP10N65C3 Datasheet Cover
IXYP10N65C3 Datasheet Page 2 IXYP10N65C3 Datasheet Page 3 IXYP10N65C3 Datasheet Page 4 IXYP10N65C3 Datasheet Page 5 IXYP10N65C3 Datasheet Page 6

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IXYP10N65C3 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)54A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max160W
Switching Energy240µJ (on), 110µJ (off)
Input TypeStandard
Gate Charge18nC
Td (on/off) @ 25°C20ns/77ns
Test Condition400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Manufacturer

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Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

120A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 32A

Power - Max

300W

Switching Energy

950µJ (on), 2.9mJ (off)

Input Type

Standard

Gate Charge

110nC

Td (on/off) @ 25°C

25ns/334ns

Test Condition

480V, 32A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

330A

Vce(on) (Max) @ Vge, Ic

1.4V @ 15V, 20A

Power - Max

223W

Switching Energy

-

Input Type

Standard

Gate Charge

95nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

IHD10N60RA

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 10A

Power - Max

110W

Switching Energy

270µJ

Input Type

Standard

Gate Charge

62nC

Td (on/off) @ 25°C

-/170ns

Test Condition

400V, 10A, 23Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

PG-TO252-3

IGC70T120T8RL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

225A

Vce(on) (Max) @ Vge, Ic

2.07V @ 15V, 75A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

3.3V @ 15V, 35A

Power - Max

400W

Switching Energy

900µJ (on), 3.8mJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

40ns/270ns

Test Condition

960V, 35A, 3Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

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