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MS2396

MS2396

For Reference Only

Part Number MS2396
PNEDA Part # MS2396
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MS2396 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberMS2396
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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MS2396 Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Infineon Technologies

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Series

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Frequency - Transition

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Noise Figure (dB Typ @ f)

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

Gain

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Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

110 @ 30mA, 3V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Broadcom

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Mounting Type

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Supplier Device Package

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