MURS160T3G
For Reference Only
| Part Number | MURS160T3G |
| PNEDA Part # | MURS160T3G |
| Description | DIODE GEN PURP 600V 2A SMB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 1,842,276 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MURS160T3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MURS160T3G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MURS160T3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75ns |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | SMB |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 5A Voltage - Forward (Vf) (Max) @ If 1.5V @ 5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 20µA @ 400V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package TP Operating Temperature - Junction 150°C (Max) |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/590 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 220V Current - Average Rectified (Io) 1.75A Voltage - Forward (Vf) (Max) @ If 1.35V @ 1.2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 2µA @ 220V Capacitance @ Vr, F 40pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SQ-MELF, E Supplier Device Package D-5B Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 2.1V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 70µA @ 600V Capacitance @ Vr, F 240pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-1 Operating Temperature - Junction -55°C ~ 175°C |
