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NP80N06MLG-S18-AY

NP80N06MLG-S18-AY

For Reference Only

Part Number NP80N06MLG-S18-AY
PNEDA Part # NP80N06MLG-S18-AY
Description MOSFET N-CH 60V 80A TO-220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,554
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP80N06MLG-S18-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP80N06MLG-S18-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP80N06MLG-S18-AY, NP80N06MLG-S18-AY Datasheet (Total Pages: 12, Size: 347.36 KB)
PDFNP80N06PLG-E1B-AY Datasheet Cover
NP80N06PLG-E1B-AY Datasheet Page 2 NP80N06PLG-E1B-AY Datasheet Page 3 NP80N06PLG-E1B-AY Datasheet Page 4 NP80N06PLG-E1B-AY Datasheet Page 5 NP80N06PLG-E1B-AY Datasheet Page 6 NP80N06PLG-E1B-AY Datasheet Page 7 NP80N06PLG-E1B-AY Datasheet Page 8 NP80N06PLG-E1B-AY Datasheet Page 9 NP80N06PLG-E1B-AY Datasheet Page 10 NP80N06PLG-E1B-AY Datasheet Page 11

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NP80N06MLG-S18-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs128nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6900pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 115W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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