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NTD60N02R-1G

NTD60N02R-1G

For Reference Only

Part Number NTD60N02R-1G
PNEDA Part # NTD60N02R-1G
Description MOSFET N-CH 25V 8.5A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTD60N02R-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTD60N02R-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTD60N02R-1G, NTD60N02R-1G Datasheet (Total Pages: 8, Size: 79.51 KB)
PDFNTD60N02RT4G Datasheet Cover
NTD60N02RT4G Datasheet Page 2 NTD60N02RT4G Datasheet Page 3 NTD60N02RT4G Datasheet Page 4 NTD60N02RT4G Datasheet Page 5 NTD60N02RT4G Datasheet Page 6 NTD60N02RT4G Datasheet Page 7 NTD60N02RT4G Datasheet Page 8

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NTD60N02R-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1330pF @ 20V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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