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NVMJS1D6N06CLTWG

NVMJS1D6N06CLTWG

For Reference Only

Part Number NVMJS1D6N06CLTWG
PNEDA Part # NVMJS1D6N06CLTWG
Description T6 60V LL LFPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMJS1D6N06CLTWG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMJS1D6N06CLTWG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMJS1D6N06CLTWG, NVMJS1D6N06CLTWG Datasheet (Total Pages: 6, Size: 146.09 KB)
PDFNVMJS1D6N06CLTWG Datasheet Cover
NVMJS1D6N06CLTWG Datasheet Page 2 NVMJS1D6N06CLTWG Datasheet Page 3 NVMJS1D6N06CLTWG Datasheet Page 4 NVMJS1D6N06CLTWG Datasheet Page 5 NVMJS1D6N06CLTWG Datasheet Page 6

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NVMJS1D6N06CLTWG Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.36mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6660pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-LFPAK
Package / Case8-PowerSMD, Gull Wing

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