Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RCX510N25

RCX510N25

For Reference Only

Part Number RCX510N25
PNEDA Part # RCX510N25
Description MOSFET N-CH 250V 51A TO-220FM
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 21,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RCX510N25 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRCX510N25
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RCX510N25, RCX510N25 Datasheet (Total Pages: 4, Size: 134.78 KB)
PDFRCX510N25 Datasheet Cover
RCX510N25 Datasheet Page 2 RCX510N25 Datasheet Page 3 RCX510N25 Datasheet Page 4

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RCX510N25 Datasheet
  • where to find RCX510N25
  • Rohm Semiconductor

  • Rohm Semiconductor RCX510N25
  • RCX510N25 PDF Datasheet
  • RCX510N25 Stock

  • RCX510N25 Pinout
  • Datasheet RCX510N25
  • RCX510N25 Supplier

  • Rohm Semiconductor Distributor
  • RCX510N25 Price
  • RCX510N25 Distributor

RCX510N25 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C51A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FM
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

IPB80N06S2L11ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2075pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTK250N10

IXYS

Manufacturer

IXYS

Series

MegaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

250A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

430nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12700pF @ 25V

FET Feature

-

Power Dissipation (Max)

730W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA

SI7485DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

7.3mOhm @ 20A, 4.5V

Vgs(th) (Max) @ Id

900mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs

150nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

TK6A60W,S4VX

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

DTMOSIV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id

3.7V @ 310µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

390pF @ 300V

FET Feature

Super Junction

Power Dissipation (Max)

30W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

IPA60R600P7SE8228XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 1.7A, 10V

Vgs(th) (Max) @ Id

4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

363pF @ 400V

FET Feature

-

Power Dissipation (Max)

21W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

Recently Sold

SSM3K15AFS,LF

SSM3K15AFS,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 0.1A SSM

AD7495ARMZ

AD7495ARMZ

Analog Devices

IC ADC 12BIT SAR 8MSOP

S558-5999-Q3-F

S558-5999-Q3-F

Bel Fuse

MODULE XFRMR LAN GIGABIT 48P SMD

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

LT3012EFE#PBF

LT3012EFE#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 250MA 16TSSOP

MMSS8550-L-TP

MMSS8550-L-TP

Micro Commercial Co

TRANS PNP 25V 1.5A SOT-23

ADM7154ACPZ-3.3-R7

ADM7154ACPZ-3.3-R7

Analog Devices

IC REG LINEAR 3.3V 600MA 8LFCSP

AT24C1024BW-SH-T

AT24C1024BW-SH-T

Microchip Technology

IC EEPROM 1M I2C 1MHZ 8SOIC

SMCJ15A-13-F

SMCJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMC

LD1086D2T33TR

LD1086D2T33TR

STMicroelectronics

IC REG LINEAR 3.3V 1.5A D2PAK

ST62T25CM6

ST62T25CM6

STMicroelectronics

IC MCU 8BIT 4KB OTP 28SOIC

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD