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RGC80TSX8RGC11

RGC80TSX8RGC11

For Reference Only

Part Number RGC80TSX8RGC11
PNEDA Part # RGC80TSX8RGC11
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 7,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGC80TSX8RGC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGC80TSX8RGC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGC80TSX8RGC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)1800V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic5V @ 15V, 40A
Power - Max535W
Switching Energy1.85mJ (on), 1.6mJ (off)
Input TypeStandard
Gate Charge468nC
Td (on/off) @ 25°C80ns/565ns
Test Condition600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

900A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 100A

Power - Max

1630W

Switching Energy

3mJ (on), 1.7mJ (off)

Input Type

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Gate Charge

315nC

Td (on/off) @ 25°C

47ns/125ns

Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

15A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 5A

Power - Max

89W

Switching Energy

300µJ (on), 300µJ (off)

Input Type

Standard

Gate Charge

45nC

Td (on/off) @ 25°C

20ns/160ns

Test Condition

600V, 5A, 47Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Manufacturer

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Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

170nC

Td (on/off) @ 25°C

28ns/160ns

Test Condition

400V, 50A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

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RGS80TSX2HRC11

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

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Switching Energy

3mJ (on), 3.1mJ (off)

Input Type

Standard

Gate Charge

104nC

Td (on/off) @ 25°C

49ns/199ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247N

SGB02N120ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

6.2A

Current - Collector Pulsed (Icm)

9.6A

Vce(on) (Max) @ Vge, Ic

3.6V @ 15V, 2A

Power - Max

62W

Switching Energy

220µJ

Input Type

Standard

Gate Charge

11nC

Td (on/off) @ 25°C

23ns/260ns

Test Condition

800V, 2A, 91Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

PG-TO263-3

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