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RP1E090XNTCR

RP1E090XNTCR

For Reference Only

Part Number RP1E090XNTCR
PNEDA Part # RP1E090XNTCR
Description MOSFET N-CH 30V 9A MPT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 6,678
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RP1E090XNTCR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRP1E090XNTCR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RP1E090XNTCR, RP1E090XNTCR Datasheet (Total Pages: 7, Size: 457.83 KB)
PDFRP1E090XNTCR Datasheet Cover
RP1E090XNTCR Datasheet Page 2 RP1E090XNTCR Datasheet Page 3 RP1E090XNTCR Datasheet Page 4 RP1E090XNTCR Datasheet Page 5 RP1E090XNTCR Datasheet Page 6 RP1E090XNTCR Datasheet Page 7

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RP1E090XNTCR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMPT6
Package / Case6-SMD, Flat Leads

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