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RQ3E180AJTB

RQ3E180AJTB

For Reference Only

Part Number RQ3E180AJTB
PNEDA Part # RQ3E180AJTB
Description MOSFET N-CH 30V 18A HSMR8
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 6,246
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RQ3E180AJTB Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRQ3E180AJTB
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RQ3E180AJTB, RQ3E180AJTB Datasheet (Total Pages: 12, Size: 2,424.41 KB)
PDFRQ3E180AJTB Datasheet Cover
RQ3E180AJTB Datasheet Page 2 RQ3E180AJTB Datasheet Page 3 RQ3E180AJTB Datasheet Page 4 RQ3E180AJTB Datasheet Page 5 RQ3E180AJTB Datasheet Page 6 RQ3E180AJTB Datasheet Page 7 RQ3E180AJTB Datasheet Page 8 RQ3E180AJTB Datasheet Page 9 RQ3E180AJTB Datasheet Page 10 RQ3E180AJTB Datasheet Page 11

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RQ3E180AJTB Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs4.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs39nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds4290pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta), 30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSMT (3.2x3)
Package / Case8-PowerVDFN

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