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SGM2N60UFTF

SGM2N60UFTF

For Reference Only

Part Number SGM2N60UFTF
PNEDA Part # SGM2N60UFTF
Description IGBT 600V 2.4A 2.1W SOT-223
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,218
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 26 - May 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGM2N60UFTF Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSGM2N60UFTF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
SGM2N60UFTF, SGM2N60UFTF Datasheet (Total Pages: 7, Size: 537.67 KB)
PDFSGM2N60UFTF Datasheet Cover
SGM2N60UFTF Datasheet Page 2 SGM2N60UFTF Datasheet Page 3 SGM2N60UFTF Datasheet Page 4 SGM2N60UFTF Datasheet Page 5 SGM2N60UFTF Datasheet Page 6 SGM2N60UFTF Datasheet Page 7

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SGM2N60UFTF Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)2.4A
Current - Collector Pulsed (Icm)10A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 1.2A
Power - Max2.1W
Switching Energy30µJ (on), 13µJ (off)
Input TypeStandard
Gate Charge9nC
Td (on/off) @ 25°C15ns/80ns
Test Condition300V, 1.2A, 200Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223-4

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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