Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI5515CDC-T1-E3

SI5515CDC-T1-E3

For Reference Only

Part Number SI5515CDC-T1-E3
PNEDA Part # SI5515CDC-T1-E3
Description MOSFET N/P-CH 20V 4A 1206-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 28,212
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI5515CDC-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI5515CDC-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI5515CDC-T1-E3, SI5515CDC-T1-E3 Datasheet (Total Pages: 16, Size: 278.41 KB)
PDFSI5515CDC-T1-GE3 Datasheet Cover
SI5515CDC-T1-GE3 Datasheet Page 2 SI5515CDC-T1-GE3 Datasheet Page 3 SI5515CDC-T1-GE3 Datasheet Page 4 SI5515CDC-T1-GE3 Datasheet Page 5 SI5515CDC-T1-GE3 Datasheet Page 6 SI5515CDC-T1-GE3 Datasheet Page 7 SI5515CDC-T1-GE3 Datasheet Page 8 SI5515CDC-T1-GE3 Datasheet Page 9 SI5515CDC-T1-GE3 Datasheet Page 10 SI5515CDC-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI5515CDC-T1-E3 Datasheet
  • where to find SI5515CDC-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI5515CDC-T1-E3
  • SI5515CDC-T1-E3 PDF Datasheet
  • SI5515CDC-T1-E3 Stock

  • SI5515CDC-T1-E3 Pinout
  • Datasheet SI5515CDC-T1-E3
  • SI5515CDC-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI5515CDC-T1-E3 Price
  • SI5515CDC-T1-E3 Distributor

SI5515CDC-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds632pF @ 10V
Power - Max3.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™

The Products You May Be Interested In

DMC3400SDW-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

650mA, 450mA

Rds On (Max) @ Id, Vgs

400mOhm @ 590mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 15V

Power - Max

310mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

IPG20N06S415AATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

15.5mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2260pF @ 25V

Power - Max

50W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount, Wettable Flank

Package / Case

8-PowerVDFN

Supplier Device Package

PG-TDSON-8-10

BSO211PNTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.7A

Rds On (Max) @ Id, Vgs

67mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

23.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

P-DSO-8

SSM6P35AFU,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate, 1.2V Drive

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

250mA (Ta)

Rds On (Max) @ Id, Vgs

1.4Ohm @ 150mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

42pF @ 10V

Power - Max

285mW (Ta)

Operating Temperature

150°C

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

FW707-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

26mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

Power - Max

2.5W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.173", 4.40mm Width)

Supplier Device Package

8-SOP

Recently Sold

G8QE-1A DC12

G8QE-1A DC12

Omron Electronics Inc-EMC Div

RELAY AUTOMOTIVE SPST 10A 12V

VLS252012HBX-2R2M-1

VLS252012HBX-2R2M-1

TDK

FIXED IND 2.2UH 2.3A 102 MOHM

SI4368DY-T1-E3

SI4368DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

MP24833GN-Z

MP24833GN-Z

Monolithic Power Systems Inc.

IC LED DRIVER

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

17-21SURC/S530-A3/TR8

17-21SURC/S530-A3/TR8

Everlight Electronics Co Ltd

LED RED CLEAR SMD

MC9S08AC96CLKE

MC9S08AC96CLKE

NXP

IC MCU 8BIT 96KB FLASH 80LQFP

XC6VLX130T-2FFG1156I

XC6VLX130T-2FFG1156I

Xilinx

IC FPGA 600 I/O 1156FCBGA

MC14099BDWR2G

MC14099BDWR2G

ON Semiconductor

IC LATCH 8BIT ADDRESS 16-SOIC

DSPIC30F4011-30I/PT

DSPIC30F4011-30I/PT

Microchip Technology

IC MCU 16BIT 48KB FLASH 44TQFP

TLP116A(TPL,E

TLP116A(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PUSH PULL SO6-5

EN5339QI

EN5339QI

Intel

DC DC CONVERTER 0.6-4.6V 14W