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SIUD402ED-T1-GE3

SIUD402ED-T1-GE3

For Reference Only

Part Number SIUD402ED-T1-GE3
PNEDA Part # SIUD402ED-T1-GE3
Description MOSFET N-CH 20V 1A POWERPAK0806
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,858
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIUD402ED-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIUD402ED-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIUD402ED-T1-GE3, SIUD402ED-T1-GE3 Datasheet (Total Pages: 9, Size: 212.02 KB)
PDFSIUD402ED-T1-GE3 Datasheet Cover
SIUD402ED-T1-GE3 Datasheet Page 2 SIUD402ED-T1-GE3 Datasheet Page 3 SIUD402ED-T1-GE3 Datasheet Page 4 SIUD402ED-T1-GE3 Datasheet Page 5 SIUD402ED-T1-GE3 Datasheet Page 6 SIUD402ED-T1-GE3 Datasheet Page 7 SIUD402ED-T1-GE3 Datasheet Page 8 SIUD402ED-T1-GE3 Datasheet Page 9

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SIUD402ED-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds16pF @ 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 0806
Package / CasePowerPAK® 0806

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