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STB185N55F3

STB185N55F3

For Reference Only

Part Number STB185N55F3
PNEDA Part # STB185N55F3
Description MOSFET N-CH 55V 120A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB185N55F3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB185N55F3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB185N55F3, STB185N55F3 Datasheet (Total Pages: 14, Size: 330.13 KB)
PDFSTB185N55F3 Datasheet Cover
STB185N55F3 Datasheet Page 2 STB185N55F3 Datasheet Page 3 STB185N55F3 Datasheet Page 4 STB185N55F3 Datasheet Page 5 STB185N55F3 Datasheet Page 6 STB185N55F3 Datasheet Page 7 STB185N55F3 Datasheet Page 8 STB185N55F3 Datasheet Page 9 STB185N55F3 Datasheet Page 10 STB185N55F3 Datasheet Page 11

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STB185N55F3 Specifications

ManufacturerSTMicroelectronics
SeriesSTripFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6800pF @ 25V
FET Feature-
Power Dissipation (Max)330W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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