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STD2HNK60Z-1

STD2HNK60Z-1

For Reference Only

Part Number STD2HNK60Z-1
PNEDA Part # STD2HNK60Z-1
Description MOSFET N-CH 600V 2A IPAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 29,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 28 - May 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STD2HNK60Z-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTD2HNK60Z-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STD2HNK60Z-1, STD2HNK60Z-1 Datasheet (Total Pages: 29, Size: 827.9 KB)
PDFSTF2HNK60Z Datasheet Cover
STF2HNK60Z Datasheet Page 2 STF2HNK60Z Datasheet Page 3 STF2HNK60Z Datasheet Page 4 STF2HNK60Z Datasheet Page 5 STF2HNK60Z Datasheet Page 6 STF2HNK60Z Datasheet Page 7 STF2HNK60Z Datasheet Page 8 STF2HNK60Z Datasheet Page 9 STF2HNK60Z Datasheet Page 10 STF2HNK60Z Datasheet Page 11

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STD2HNK60Z-1 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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