Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STF3N62K3

STF3N62K3

For Reference Only

Part Number STF3N62K3
PNEDA Part # STF3N62K3
Description MOSFET N-CH 620V 2.7A TO-220FP
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 21,192
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STF3N62K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTF3N62K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STF3N62K3, STF3N62K3 Datasheet (Total Pages: 27, Size: 725.51 KB)
PDFSTD3N62K3 Datasheet Cover
STD3N62K3 Datasheet Page 2 STD3N62K3 Datasheet Page 3 STD3N62K3 Datasheet Page 4 STD3N62K3 Datasheet Page 5 STD3N62K3 Datasheet Page 6 STD3N62K3 Datasheet Page 7 STD3N62K3 Datasheet Page 8 STD3N62K3 Datasheet Page 9 STD3N62K3 Datasheet Page 10 STD3N62K3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STF3N62K3 Datasheet
  • where to find STF3N62K3
  • STMicroelectronics

  • STMicroelectronics STF3N62K3
  • STF3N62K3 PDF Datasheet
  • STF3N62K3 Stock

  • STF3N62K3 Pinout
  • Datasheet STF3N62K3
  • STF3N62K3 Supplier

  • STMicroelectronics Distributor
  • STF3N62K3 Price
  • STF3N62K3 Distributor

STF3N62K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)620V
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds385pF @ 25V
FET Feature-
Power Dissipation (Max)20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

177nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

11400pF @ 25V

FET Feature

-

Power Dissipation (Max)

263W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SUD50P10-43L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

37.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

43mOhm @ 9.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

160nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4600pF @ 50V

FET Feature

-

Power Dissipation (Max)

8.3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IPC60R190E6X1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NTD20N06-001

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

46mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1015pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.88W (Ta), 60W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

SMBJ15A-E3/52

SMBJ15A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15V 24.4V DO214AA

ADA4861-3YRZ-RL7

ADA4861-3YRZ-RL7

Analog Devices

IC OPAMP CFA 3 CIRCUIT 14SOIC

74HC123D

74HC123D

Toshiba Semiconductor and Storage

IC MULTIVIBRATR DUAL MONO 16SOIC

MT25QL128ABA1EW9-0SIT

MT25QL128ABA1EW9-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 8WPDFN

AD22037Z

AD22037Z

Analog Devices

ACCELEROMETER 18G ANALOG 8CLCC

MAX3387EEUG

MAX3387EEUG

Maxim Integrated

IC TRANSCEIVER FULL 3/3 24TSSOP

NC7WZ241K8X

NC7WZ241K8X

ON Semiconductor

IC BUFFER NON-INVERT 5.5V US8

MM74HC163N

MM74HC163N

ON Semiconductor

IC COUNTER BINARY PRESET 16-DIP

LC4064V-75TN100C

LC4064V-75TN100C

Lattice Semiconductor Corporation

IC CPLD 64MC 7.5NS 100TQFP

DS3232SN#T&R

DS3232SN#T&R

Maxim Integrated

IC RTC CLK/CALENDAR I2C 20-SOIC

DS2781E+T&R

DS2781E+T&R

Maxim Integrated

IC FUEL GAUGE BATT 8TSSOP

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA