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STP11NM80

STP11NM80

For Reference Only

Part Number STP11NM80
PNEDA Part # STP11NM80
Description MOSFET N-CH 800V 11A TO-220
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Dec 11 - Dec 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STP11NM80 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTP11NM80
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STP11NM80, STP11NM80 Datasheet (Total Pages: 22, Size: 904.76 KB)
PDFSTI11NM80 Datasheet Cover
STI11NM80 Datasheet Page 2 STI11NM80 Datasheet Page 3 STI11NM80 Datasheet Page 4 STI11NM80 Datasheet Page 5 STI11NM80 Datasheet Page 6 STI11NM80 Datasheet Page 7 STI11NM80 Datasheet Page 8 STI11NM80 Datasheet Page 9 STI11NM80 Datasheet Page 10 STI11NM80 Datasheet Page 11

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STP11NM80 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43.6nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1630pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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