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STS20N3LLH6

STS20N3LLH6

For Reference Only

Part Number STS20N3LLH6
PNEDA Part # STS20N3LLH6
Description MOSFET N-CH 30V 20A 8SOIC
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 28 - Jul 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STS20N3LLH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTS20N3LLH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STS20N3LLH6, STS20N3LLH6 Datasheet (Total Pages: 13, Size: 543.16 KB)
PDFSTS20N3LLH6 Datasheet Cover
STS20N3LLH6 Datasheet Page 2 STS20N3LLH6 Datasheet Page 3 STS20N3LLH6 Datasheet Page 4 STS20N3LLH6 Datasheet Page 5 STS20N3LLH6 Datasheet Page 6 STS20N3LLH6 Datasheet Page 7 STS20N3LLH6 Datasheet Page 8 STS20N3LLH6 Datasheet Page 9 STS20N3LLH6 Datasheet Page 10 STS20N3LLH6 Datasheet Page 11

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STS20N3LLH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1690pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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