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TPH2900ENH,L1Q

TPH2900ENH,L1Q

For Reference Only

Part Number TPH2900ENH,L1Q
PNEDA Part # TPH2900ENH-L1Q
Description MOSFET N-CH 200V 33A SOP8
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,406
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 3 - Jul 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPH2900ENH Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPH2900ENH,L1Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TPH2900ENH Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C33A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs29mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 100V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

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