TSM3N90CZ C0G
For Reference Only
| Part Number | TSM3N90CZ C0G |
| PNEDA Part # | TSM3N90CZ-C0G |
| Description | MOSFET N-CH 900V 2.5A TO220 |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 19,440 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 17 - Jun 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TSM3N90CZ C0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
|
| Mfr. Part Number | TSM3N90CZ C0G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TSM3N90CZ C0G Datasheet
- where to find TSM3N90CZ C0G
- Taiwan Semiconductor Corporation
- Taiwan Semiconductor Corporation TSM3N90CZ C0G
- TSM3N90CZ C0G PDF Datasheet
- TSM3N90CZ C0G Stock
- TSM3N90CZ C0G Pinout
- Datasheet TSM3N90CZ C0G
- TSM3N90CZ C0G Supplier
- Taiwan Semiconductor Corporation Distributor
- TSM3N90CZ C0G Price
- TSM3N90CZ C0G Distributor
TSM3N90CZ C0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 5.1Ohm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 748pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 700V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1175pF @ 25V FET Feature - Power Dissipation (Max) 38.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 40V FET Feature - Power Dissipation (Max) 150W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer STMicroelectronics Series SuperMESH5™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1050V Current - Continuous Drain (Id) @ 25°C 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 120mOhm @ 22A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 175nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 100V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C Mounting Type Through Hole Supplier Device Package MAX247™ Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 77A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 8.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 10V FET Feature - Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 31A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 105mOhm @ 18A, 10V Vgs(th) (Max) @ Id 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 100V FET Feature - Power Dissipation (Max) 255W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
