TSM60NB900CH C5G
For Reference Only
| Part Number | TSM60NB900CH C5G |
| PNEDA Part # | TSM60NB900CH-C5G |
| Description | MOSFET N-CHANNEL 600V 4A TO251 |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 114,702 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 19 - May 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TSM60NB900CH C5G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
|
| Mfr. Part Number | TSM60NB900CH C5G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TSM60NB900CH C5G Datasheet
- where to find TSM60NB900CH C5G
- Taiwan Semiconductor Corporation
- Taiwan Semiconductor Corporation TSM60NB900CH C5G
- TSM60NB900CH C5G PDF Datasheet
- TSM60NB900CH C5G Stock
- TSM60NB900CH C5G Pinout
- Datasheet TSM60NB900CH C5G
- TSM60NB900CH C5G Supplier
- Taiwan Semiconductor Corporation Distributor
- TSM60NB900CH C5G Price
- TSM60NB900CH C5G Distributor
TSM60NB900CH C5G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 315pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 36.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 (IPAK) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
The Products You May Be Interested In
|
Manufacturer Series NexFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.15mOhm @ 40A, 10V Vgs(th) (Max) @ Id 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 15V FET Feature - Power Dissipation (Max) 3.2W (Ta), 96W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-VSON-CLIP (5x6) Package / Case 8-PowerTDFN |
Manufacturer STMicroelectronics Series MDmesh™ K5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.1Ohm @ 3A, 10V Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-204AA (TO-3) Package / Case TO-204AA, TO-3 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V FET Feature - Power Dissipation (Max) 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MP-3A Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 210A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 2.8mOhm @ 76A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 230W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3 |
