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VS-GB75LP120N

VS-GB75LP120N

For Reference Only

Part Number VS-GB75LP120N
PNEDA Part # VS-GB75LP120N
Description IGBT 1200V 170A 658W INT-A-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,228
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-GB75LP120N Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-GB75LP120N
CategorySemiconductorsTransistorsTransistors - IGBTs - Modules
Datasheet
VS-GB75LP120N, VS-GB75LP120N Datasheet (Total Pages: 7, Size: 119.26 KB)
PDFVS-GB75LP120N Datasheet Cover
VS-GB75LP120N Datasheet Page 2 VS-GB75LP120N Datasheet Page 3 VS-GB75LP120N Datasheet Page 4 VS-GB75LP120N Datasheet Page 5 VS-GB75LP120N Datasheet Page 6 VS-GB75LP120N Datasheet Page 7

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VS-GB75LP120N Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
IGBT Type-
ConfigurationSingle
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)170A
Power - Max658W
Vce(on) (Max) @ Vge, Ic1.82V @ 15V, 75A (Typ)
Current - Collector Cutoff (Max)1mA
Input Capacitance (Cies) @ Vce5.52nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseINT-A-PAK (3 + 4)
Supplier Device PackageINT-A-PAK

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