Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

ZXMN10A07FTC

ZXMN10A07FTC

For Reference Only

Part Number ZXMN10A07FTC
PNEDA Part # ZXMN10A07FTC
Description MOSFET N-CH 100V 700MA SOT23-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 4,338
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ZXMN10A07FTC Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part NumberZXMN10A07FTC
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
ZXMN10A07FTC, ZXMN10A07FTC Datasheet (Total Pages: 7, Size: 265.74 KB)
PDFZXMN10A07FTC Datasheet Cover
ZXMN10A07FTC Datasheet Page 2 ZXMN10A07FTC Datasheet Page 3 ZXMN10A07FTC Datasheet Page 4 ZXMN10A07FTC Datasheet Page 5 ZXMN10A07FTC Datasheet Page 6 ZXMN10A07FTC Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • ZXMN10A07FTC Datasheet
  • where to find ZXMN10A07FTC
  • Diodes Incorporated

  • Diodes Incorporated ZXMN10A07FTC
  • ZXMN10A07FTC PDF Datasheet
  • ZXMN10A07FTC Stock

  • ZXMN10A07FTC Pinout
  • Datasheet ZXMN10A07FTC
  • ZXMN10A07FTC Supplier

  • Diodes Incorporated Distributor
  • ZXMN10A07FTC Price
  • ZXMN10A07FTC Distributor

ZXMN10A07FTC Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs700mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds138pF @ 50V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

210A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 105A, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

255nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

18600pF @ 25V

FET Feature

-

Power Dissipation (Max)

1500W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

2SK2963(TE12L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

700mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

6.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PW-MINI

Package / Case

TO-243AA

STB80NF03L-04-1

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-60°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

240nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

137mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

339pF @ 25V

FET Feature

-

Power Dissipation (Max)

53W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

RT6238BHGQUF

RT6238BHGQUF

Richtek USA Inc.

IC REG BUCK ADJUSTABLE 8A 14UQFN

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

R5F1076CGSP#X0

R5F1076CGSP#X0

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 20LSSOP

9DBL411BGILFT

9DBL411BGILFT

IDT, Integrated Device Technology

IC CLK FANOUT/BUFF DIFF 20TSSOP

TAJA226K010RNJ

TAJA226K010RNJ

CAP TANT 22UF 10% 10V 1206

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

SMAJ150CA-E3/61

SMAJ150CA-E3/61

Vishay Semiconductor Diodes Division

TVS DIODE 150V 243V DO214AC

ISL6262CRZ

ISL6262CRZ

Renesas Electronics America Inc.

IC REG CONV INTEL 1OUT 48QFN

Q8F1CXXB12E

Q8F1CXXB12E

APEM Inc.

INDICATOR 12V 8MM FLUSH BLUE

LTST-C190KFKT

LTST-C190KFKT

Lite-On Inc.

LED ORANGE CLEAR CHIP SMD

25AA512T-I/SM

25AA512T-I/SM

Microchip Technology

IC EEPROM 512K SPI 20MHZ 8SOIJ

SM05T1G

SM05T1G

ON Semiconductor

TVS DIODE 5V 9.8V SOT23-3