Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 1209/2164
Image
Part Number
Description
In Stock
Quantity
FDU6N25
FDU6N25

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 4.4A IPAK-3

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Stub Leads, IPak
In Stock52,308
FDU6N50TU
FDU6N50TU

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 6A IPAK

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock2,520
FDU7030BL
FDU7030BL

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 14A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 60W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock6,588
FDU7N60NZTU
FDU7N60NZTU

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V SGL IPAK

  • Manufacturer: ON Semiconductor
  • Series: UniFET-II™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.75A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock4,716
FDU8580
FDU8580

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1445pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 49.5W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock6,948
FDU8586
FDU8586

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 20V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock2,664
FDU8770
FDU8770

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock2,088
FDU8770_F071
FDU8770_F071

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A IPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock3,006
FDU8778
FDU8778

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock7,218
FDU8780
FDU8780

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock6,318
FDU8780_F071
FDU8780_F071

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A IPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock7,740
FDU8782
FDU8782

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock4,572
FDU8796
FDU8796

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock6,768
FDU8796_F071
FDU8796_F071

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 35A IPAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 13V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock7,146
FDU8870
FDU8870

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 160A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock2,736
FDU8874
FDU8874

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 116A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock5,364
FDU8876
FDU8876

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 73A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock3,888
FDU8878
FDU8878

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 40A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock4,122
FDU8880
FDU8880

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 58A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock7,164
FDU8882
FDU8882

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 55A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock7,560
FDU8896
FDU8896

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 94A I-PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
In Stock2,142
FDV045P20L
FDV045P20L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 20V 1.15A SOT23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 108mOhm @ 1.15A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock23,082
FDV301N
FDV301N

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 220MA SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.06V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock12,218,058
FDV301N_D87Z
FDV301N_D87Z

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 0.22A SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.06V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Vgs (Max): 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,472
FDV301N-NB9V005
FDV301N-NB9V005

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 220MA SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.06V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
  • Vgs (Max): 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock4,122
FDV302P
FDV302P

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 25V 120MA SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock1,549,296
FDV302P_D87Z
FDV302P_D87Z

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 25V 0.12A SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
  • Vgs (Max): -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,600
FDV302P-NB8V001
FDV302P-NB8V001

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET P-CH 25V 120MA SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.31nC @ 4.5V
  • Vgs (Max): -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 11pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock7,866
FDV303N
FDV303N

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 680MA SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock2,636,100
FDV303N_NB9U008
FDV303N_NB9U008

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 25V 680MA SOT-23

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
  • Vgs (Max): 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock3,078