Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1248/2164

Part Number	Description	In Stock
GKI03080 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 26A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock2,214
GKI04031 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 17A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63.2nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3910pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock8,964
GKI04048 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 14A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 35.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 35.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock8,730
GKI04076 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 11A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 23.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 24.9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock8,784
GKI04101 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 9A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 18.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock2,484
GKI06071 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 11A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 34A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,438
GKI06109 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 9A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9mOhm @ 23.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,570
GKI06185 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 7A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 15.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 23.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,762
GKI06259 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 6A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,714
GKI07113 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 9A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.1mOhm @ 27.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,690
GKI07174 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 26A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 18.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock5,022
GKI07301 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 6A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 23.2mOhm @ 12.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock2,538
GKI10194 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 7A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17.6mOhm @ 20.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3990pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock6,408
GKI10301 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 14.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock7,722
GKI10526 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 4A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 47.7mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 25V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock2,214
GP1M003A040CG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 2A DPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock2,160
GP1M003A040PG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 2A IPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,694
GP1M003A050CG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A DPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,650
GP1M003A050FG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO220F Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V FET Feature: - Power Dissipation (Max): 17.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock5,418
GP1M003A050HG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A TO220 Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V FET Feature: - Power Dissipation (Max): 52.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock4,986
GP1M003A050PG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.5A IPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 25V FET Feature: - Power Dissipation (Max): 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,928
GP1M003A080CH Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A DPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,496
GP1M003A080FH Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A TO220F Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V FET Feature: - Power Dissipation (Max): 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock8,550
GP1M003A080H Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A TO220 Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock3,508
GP1M003A080PH Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A IPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 696pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock3,870
GP1M003A090C Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A DPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock3,726
GP1M003A090PH Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 2.5A IPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 748pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,154
GP1M004A090FH Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 4A TO220F Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V FET Feature: - Power Dissipation (Max): 38.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock4,734
GP1M004A090H Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 4A TO220 Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 25V FET Feature: - Power Dissipation (Max): 123W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock4,824
GP1M005A040CG Global Power Technologies Group	Transistors - FETs, MOSFETs - Single MOSFET N-CH 400V 3.4A DPAK Manufacturer: Global Power Technologies Group Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 522pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,084

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