Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
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Records 64,903

Page 1247/2164

Part Number	Description	In Stock
FQU7P06TU_NB82048 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 5.4A IPAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,316
FQU7P20TU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 5.7A IPAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,248
FQU7P20TU_AM002 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 200V 5.7A IPAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,788
FQU8N25TU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 6.2A IPAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,286
FQU8P10TU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 100V 6.6A IPAK Manufacturer: ON Semiconductor Series: QFET® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock36,540
FQU9N25TU ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 7.4A IPAK Manufacturer: ON Semiconductor Series: QFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock49,710
GA03JT12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 3A TO-247AB Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 460mOhm @ 3A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 15W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock2,556
GA04JT17-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1700V 4A TO-247AB Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 480mOhm @ 4A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 106W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock8,172
GA05JT01-46 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 100V 9A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 240mOhm @ 5A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-46 Package / Case: TO-46-3	In Stock6,156
GA05JT03-46 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 300V 9A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 240mOhm @ 5A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 20W (Tc) Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-46 Package / Case: TO-46-3	In Stock4,752
GA05JT12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 5A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 280mOhm @ 5A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 106W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock4,896
GA05JT12-263 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 15A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 106W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock20,400
GA06JT12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 6A TO-247AB Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 220mOhm @ 6A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock4,194
GA08JT17-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1700V 8A TO-247AB Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 250mOhm @ 8A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock14,616
GA100JT12-227 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 160A SOT227 Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 10mOhm @ 100A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V FET Feature: - Power Dissipation (Max): 535W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock8,334
GA100JT17-227 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1700V 160A SOT227 Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 10mOhm @ 100A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 800V FET Feature: - Power Dissipation (Max): 535W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	In Stock8,694
GA10JT12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1.2KV 10A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 140mOhm @ 10A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock7,020
GA10JT12-263 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 25A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 120mOhm @ 10A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	In Stock17,196
GA10SICP12-263 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 25A TO263-7 Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 100mOhm @ 10A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 1403pF @ 800V FET Feature: - Power Dissipation (Max): 170W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock8,496
GA16JT17-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1700V 16A TO-247AB Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) (90°C) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 110mOhm @ 16A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 282W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock8,460
GA20JT12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1.2KV 20A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 70mOhm @ 20A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 282W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock2,862
GA20JT12-263 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 45A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 60mOhm @ 20A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V FET Feature: - Power Dissipation (Max): 282W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock7,794
GA20SICP12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1200V 45A TO247 Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 50mOhm @ 20A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3091pF @ 800V FET Feature: - Power Dissipation (Max): 282W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock7,074
GA50JT06-258 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 600V 100A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 25mOhm @ 50A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 769W (Tc) Operating Temperature: -55°C ~ 225°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-258 Package / Case: TO-258-3, TO-258AA	In Stock6,300
GA50JT12-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1.2KV 50A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 25mOhm @ 50A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 7209pF @ 800V FET Feature: - Power Dissipation (Max): 583W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AB Package / Case: TO-247-3	In Stock6,024
GA50JT12-263 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANSISTOR 1200V 100A TO263-7 Manufacturer: GeneSiC Semiconductor Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock3,562
GA50JT17-247 GeneSiC Semiconductor	Transistors - FETs, MOSFETs - Single TRANS SJT 1.7KV 100A Manufacturer: GeneSiC Semiconductor Series: - FET Type: - Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1700V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 25mOhm @ 50A Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 583W (Tc) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	In Stock2,358
GKI03026 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 22A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 68A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4010pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 77W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock3,580
GKI03039 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 18A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8mOhm @ 47.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 38.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock5,904
GKI03061 Sanken	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 26A 8DFN Manufacturer: Sanken Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	In Stock2,196

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