Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 540/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MV POWER MOS |
6,984 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH |
6,156 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 76A (Tc) | 10V | 22mOhm @ 38A, 10V | 4.5V @ 250µA | 97nC @ 10V | ±20V | 5800pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH |
5,184 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 34A (Tc) | 10V | 96mOhm @ 17A, 10V | 5V @ 250µA | 54nC @ 10V | ±30V | 3000pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
8,964 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | 10V | 40.7mOhm @ 44A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7180pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 22A TO-247 |
5,310 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 270mOhm @ 11A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 2630pF @ 25V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 3.6A TO-220 |
8,496 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 3.6Ohm @ 500mA, 10V | 4.5V @ 1mA | 24nC @ 10V | ±20V | 685pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 800V 14A TO-3P |
4,644 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 720mOhm @ 500mA, 10V | 5.5V @ 4mA | 61nC @ 10V | ±30V | 3900pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 40V 100A TO-3PN |
4,536 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 80A, 10V | 3V @ 250µA | 450nC @ 10V | ±20V | 24740pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
HIGH POWER_NEW |
3,438 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET N-CH 600V 15A TO3PF |
8,892 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±20V | 910pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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|
IXYS |
MOSFET N-CH 75V 230A |
8,766 |
|
HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 1mA | 178nC @ 10V | - | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 120A TO-247 |
5,544 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 120A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 60A TO-247 |
2,916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 60A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 96A TO-247 |
6,948 |
|
TrenchHV™ | N-Channel | MOSFET (Metal Oxide) | 250V | 96A (Tc) | 10V | 29mOhm @ 500mA, 10V | 5V @ 1mA | 114nC @ 10V | ±30V | 6100pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 98A TO-247 |
2,286 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 98A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-263 |
8,838 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 155mOhm @ 15A, 10V | 4.5V @ 4mA | 56nC @ 10V | ±30V | 2270pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15.8A I2PAK |
6,480 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | ±30V | 1350pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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IXYS |
MOSFET N-CH 500V 26A TO-3P |
7,416 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5V @ 4mA | 42nC @ 10V | ±30V | 2220pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A 5DFN |
2,394 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 98mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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IXYS |
MOSFET N-CH 600V 22A TO-3P |
6,048 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 350mOhm @ 11A, 10V | 5.5V @ 250µA | 62nC @ 10V | ±30V | 3600pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 100V 110A TO-3P |
5,418 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 15mOhm @ 500mA, 10V | 5V @ 250µA | 110nC @ 10V | ±20V | 3550pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 60V 150A TO-3P |
3,618 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 150A (Tc) | 10V | 10mOhm @ 75A, 10V | 5V @ 250µA | 118nC @ 10V | ±20V | 3000pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 600V 35A TO-247 |
4,086 |
|
SuperMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 98mOhm @ 17.5A, 10V | 5V @ 250µA | 181nC @ 10V | ±30V | 6640pF @ 25V | - | 312.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 0.2A TO-220 |
5,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 200mA (Tc) | 10V | 30Ohm @ 50mA, 0V | 5V @ 25µA | - | ±20V | 120pF @ 25V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 8.5A TO220FP |
3,454 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.5A (Tc) | 10V | 165mOhm @ 10A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220ABFP | TO-220-3 Full Pack, Isolated Tab |
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IXYS |
MOSFET N-CH 1000V 7A TO-220 |
5,850 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 6V @ 1mA | 47nC @ 10V | ±30V | 2590pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-220AB |
7,614 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
PLANAR >= 100V |
7,956 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO247-4 |
3,508 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 40V 350A TO-247AC |
4,482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.7mOhm @ 195A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 8920pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |