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Technology Articles

Records 2,426
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IDT introduces piezoelectric MEMS oscillators for high-performance applications

2012-05 Connectors IDT, Integrated Device Technology
[May 14 2012] Integrated Device Technology has announced the launch of the world's first CrystalFree piezoelectric MEMS (pMEMS) LVDS/LVPECL oscillator for high-performance communications, consumer, cloud and industrial applications. IDT's new oscillator operates in a compact, industry-standard package with phase jitter well below 1 picosecond, making it an ideal alternative to conventional six-pin crystal osci ...
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IDT introduces the world's first piezoelectric MEMS oscillator for high-performance applications

2012-05 Connectors IDT, Integrated Device Technology
[May 13 2012] IDT Corporation announced the launch of the world's first CrystalFree™ piezoelectric MEMS (pMEMS) LVDS/LVPECL oscillator for high-performance communications, consumer, cloud and industrial applications. IDT's new oscillator operates in a compact, industry-standard package with phase jitter well below 1 picosecond, making it an ideal alternative to conventional six-pin crystal oscillators (XOs). I ...
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STMicroelectronics announces Next generation high-performance inertial sensor module

2012-05 Connectors STMicroelectronics
[May 12 2012] STMicroelectronics introduces a new family of all-in-one sensor modules with nine degrees of freedom that enable compact, portable devices to implement advanced motion position detection, mobile location services (LBS) and indoor navigation. The integration of motion position detection functions brings new opportunities to portable products such as smart phones, tablets, and personal navigators. ...
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Marvell introduces an enhanced end-to-end LTE-PON platform

2012-05 Power Maxwell Technologies
[May 11 2012] Marvell announced the launch of an enhanced end-to-end LTE-PON platform. The platform enables end users to quickly and efficiently access information in home and public clouds. In today's world, consumers are increasingly dependent on cloud access, where people access information from multiple locations and on the move. To address this trend, Marvell has introduced an LTE platform that ensures op ...
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Analog Devices introduces isolated half-bridge grid-level drivers

2012-05 Connectors Analog Devices
[May 10 2012] Analog Devices introduces the industry's fastest and most reliable isolated half-bridge grid-level drivers, the 4 A ADuM3223 and ADuM4223. The devices integrate Analog Devices' award-winning digital isolator technology to deliver up to four times the speed of optocoupler devices and a 50-year operating life. Analog Devices' new grid-level driver stages are designed to improve the performance and ...
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Molex's SolarSpec panel-mount DC connectors are now fully certified to the applicable IEC standards

2012-05 Power Molex
[May 9 2012] Molex's SolarSpec panel-mount direct current (DC) connectors are now fully certified to the applicable IEC standards and accredited by the TUV and UL certification bodies. SolarSpec Panel mounted DC connectors are designed with internal locking and contact resistance for superior safety performance. The retaining nut mechanism allows easy installation to the panel and provides a safe and reliable ...
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ON Semiconductor introduces high performance field cut-off IGBTs

2012-05 Semiconductors ON Semiconductor
[May 8 2012] ON Semiconductor has introduced a new family of Field Stop insulated gate bipolar junction transistors (IGBTs) aimed at industrial motor control and consumer products. The NGTB15N120, NGBT20N120 and NGBT25N120 are used in high-performance power conversion solutions for a wide range of demanding applications, including induction cookers, rice cookers and other small kitchen appliances. Rising ener ...
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TDK introduces the SMG3B series with embedded mSATA for industrial use

2012-05 Power TDK
[May 7 2012] TDK Corporation has developed the SMG3B series of mSATA small SSD modules that support serial ATA 3Gbps. The SMG3B series is an mSATA interface that achieves a maximum capacity of 64GByte on an area of about 30mm×50mm. High speed MSATA-type compact flash memory module with effective speed up to 170MByte/s. mSATA is a standard developed by the Serial ATA International Organization (SATA IO) and or ...
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NXP introduces GreenChip for high power LED design flexibility

2012-05 Semiconductors NXP
[May 6 2012] NXP Semiconductors N.V. announced the launch of SSL2109, a high-efficiency step-down controller for high-power, non-dimming LED lighting applications using a non-isolated topology. Used in conjunction with external power switches, the SSL2109 LED driver IC provides a single design platform for 100V, 120V and 230V power input voltages and power ranges up to 25 W. SSL2109 offers a controller-only v ...
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Vishay introduces a new generation of MOSFET devices

2012-05 Passive Components Vishay
[May 5 2012] Vishay Intertechnology has announced the launch of its new generation TrenchFET Gen IV Series 30V N-channel power MOSFET devices -SiRA00DP, SiRA02DP, SiRA04DP and SiSA04DN. All four devices feature a new high-density design with on-resistance as low as 1.35mΩ at 4.5V and Miller charge Qgd as low as 1.8nC in PowerPAK SO-8 and 1212-8 packages. The new Vishay Siliconix TrenchFET IV incorporates a nu ...
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Microsemi introduces a system management design tool for communication

2012-05 Semiconductors Microsemi
[May 4 2012] Microsemi Corporation introduces a set of system and power management design tools for high-availability wired and wireless communications infrastructure devices. New design tools include the Mixed Signal Power Manager (MPM) 4.0 reference design, which supports up to 64 power rails and mixed analog and digital point-of-loads (POL), as well as PMBus -based communication. The company also offers a ...
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Diodes New MOSFET from board height halved

2012-05 Passive Components Diodes Incorporated
[May 3 2012] Diodes Incorporated introduces a range of high-efficiency N-channel and P-channel MOSFETs in thin DFN2020-6 packages. DFN2020H4 package DMP2039UFDE4, the height from the board is only 0.4 mm, the board area is only four square millimeters, is a P-channel device with a fixed voltage of -25V, the volume is 50% thinner than similar devices. The other MOSFETs in the same series using the DFN2020E pac ...