Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFX80N50P

IXFX80N50P

For Reference Only

Part Number IXFX80N50P
PNEDA Part # IXFX80N50P
Description MOSFET N-CH 500V 80A PLUS247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,678
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFX80N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFX80N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFX80N50P, IXFX80N50P Datasheet (Total Pages: 5, Size: 230.05 KB)
PDFIXFX80N50P Datasheet Cover
IXFX80N50P Datasheet Page 2 IXFX80N50P Datasheet Page 3 IXFX80N50P Datasheet Page 4 IXFX80N50P Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFX80N50P Datasheet
  • where to find IXFX80N50P
  • IXYS

  • IXYS IXFX80N50P
  • IXFX80N50P PDF Datasheet
  • IXFX80N50P Stock

  • IXFX80N50P Pinout
  • Datasheet IXFX80N50P
  • IXFX80N50P Supplier

  • IXYS Distributor
  • IXFX80N50P Price
  • IXFX80N50P Distributor

IXFX80N50P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 40A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs197nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds12700pF @ 25V
FET Feature-
Power Dissipation (Max)1040W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS247™-3
Package / CaseTO-247-3

The Products You May Be Interested In

IPU05N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.3mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3110pF @ 15V

FET Feature

-

Power Dissipation (Max)

94W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO251-3-1

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

IPDH6N03LAG

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 30µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2390pF @ 15V

FET Feature

-

Power Dissipation (Max)

71W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMN65D8LFB-7B

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

260mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

3Ohm @ 115mA, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 25V

FET Feature

-

Power Dissipation (Max)

430mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X1-DFN1006-3

Package / Case

3-UFDFN

IRF6614TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

12.7A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.3mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2560pF @ 20V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ ST

Package / Case

DirectFET™ Isometric ST

ZVN4306GTA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

330mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

749022011

749022011

Wurth Electronics

TRANSFORMER LAN 10/100/1000 POE

3296W-1-503LF

3296W-1-503LF

Bourns

TRIMMER 50K OHM 0.5W PC PIN TOP

FSA5157L6X

FSA5157L6X

ON Semiconductor

IC SWITCH SPDT 6MICROPAK

DS1230Y-150

DS1230Y-150

Maxim Integrated

IC NVSRAM 256K PARALLEL 28EDIP

FC-135 32.7680KA-A5

FC-135 32.7680KA-A5

EPSON

CRYSTAL 32.7680 KHZ 12.5PF SMD

MMSZ4700T1G

MMSZ4700T1G

ON Semiconductor

DIODE ZENER 13V 500MW SOD123

SA555D

SA555D

ON Semiconductor

IC OSC SINGLE TIMER 8-SOP

3296W-1-103LF

3296W-1-103LF

Bourns

TRIMMER 10K OHM 0.5W PC PIN TOP

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

UFT14020

UFT14020

GeneSiC Semiconductor

DIODE GEN PURP 200V 70A TO249AB

TDA08H0SB1

TDA08H0SB1

C&K

SWITCH SLIDE DIP SPST 25MA 24V

TAJD227K010RNJ

TAJD227K010RNJ

CAP TANT 220UF 10% 10V 2917