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NTMFS5C410NLTWFT1G

NTMFS5C410NLTWFT1G

For Reference Only

Part Number NTMFS5C410NLTWFT1G
PNEDA Part # NTMFS5C410NLTWFT1G
Description MOSFET N-CH 40V 312A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTMFS5C410NLTWFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTMFS5C410NLTWFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTMFS5C410NLTWFT1G, NTMFS5C410NLTWFT1G Datasheet (Total Pages: 6, Size: 133.77 KB)
PDFNTMFS5C404NLTWFT1G Datasheet Cover
NTMFS5C404NLTWFT1G Datasheet Page 2 NTMFS5C404NLTWFT1G Datasheet Page 3 NTMFS5C404NLTWFT1G Datasheet Page 4 NTMFS5C404NLTWFT1G Datasheet Page 5 NTMFS5C404NLTWFT1G Datasheet Page 6

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NTMFS5C410NLTWFT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Ta), 330A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs143nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8862pF @ 25V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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